SST2222AT116
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- Mfr.Part #
- SST2222AT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SST3
- Stock
- 30,289
- In Stock ：
- 30,289
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Termination :
- SMD/SMT
- Max Power Dissipation :
- 350mW
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e1
- Collector Base Voltage (VCBO) :
- 75V
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 40V
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- hFE Min :
- 35
- Current Rating :
- 600mA
- Gain Bandwidth Product :
- 300MHz
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Form :
- Gull wing
- Transition Frequency :
- 300MHz
- Collector Emitter Saturation Voltage :
- 1V
- Max Collector Current :
- 600mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Factory Lead Time :
- 10 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Turn Off Time-Max (toff) :
- 285ns
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Pin Count :
- 3
- Collector-Base Capacitance-Max :
- 7pF
- Max Breakdown Voltage :
- 40V
- Mount :
- Surface Mount
- Published :
- 2007
- Continuous Collector Current :
- 600mA
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 40V
- HTS Code :
- 8541.21.00.75
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- T2222A
- Datasheets
- SST2222AT116
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SST2222AT116 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 600mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 600mA.In the part, the transition frequency is 300MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 600mA volts can be achieved.
SST2222AT116 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
SST2222AT116 Applications
There are a lot of ROHM Semiconductor
SST2222AT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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