SST2907AHZGT116

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Mfr.Part #
SST2907AHZGT116
Manufacturer
ROHM Semiconductor
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 60V 0.6A SST3
Stock
4,900
In Stock :
4,900

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
600mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Published :
2016
Turn On Time-Max (ton) :
50ns
JESD-30 Code :
R-PDSO-G3
Transition Frequency :
200MHz
Configuration :
Single
Reach Compliance Code :
not_compliant
Terminal Position :
Dual
Power - Max :
200mW
Operating Temperature :
150°C TJ
Terminal Form :
Gull wing
Frequency - Transition :
200MHz
Polarity/Channel Type :
PNP
Package / Case :
TO-236-3, SC-59, SOT-23-3
Current - Collector Cutoff (Max) :
100nA ICBO
Transistor Application :
SWITCHING
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 50mA, 500mA
Number of Terminations :
3
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Cut Tape (CT)
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Number of Elements :
1
Factory Lead Time :
13 Weeks
Voltage - Collector Emitter Breakdown (Max) :
60V
Surface Mount :
yes
Transistor Type :
PNP
Series :
Automotive, AEC-Q101
Turn Off Time-Max (toff) :
110ns
ECCN Code :
EAR99
Datasheets
SST2907AHZGT116
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor SST2907AHZGT116 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Mounting Type:Surface Mount, SST2907AHZGT116 pinout, SST2907AHZGT116 datasheet PDF, SST2907AHZGT116 amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor SST2907AHZGT116 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor SST2907AHZGT116


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount

SST2907AHZGT116 Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.200MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 60V.

SST2907AHZGT116 Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 200MHz


SST2907AHZGT116 Applications


There are a lot of ROHM Semiconductor
SST2907AHZGT116 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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