SSM6K504NU,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Number of Elements :

1

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.026ohm

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 4.5V

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Number of Terminations :

6

Pulsed Drain Current-Max (IDM) :

18A

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

19.5m Ω @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Transistor Application :

SWITCHING

Published :

2014

Vgs (Max) :

±20V

Operating Temperature :

150°C TJ

Series :

U-MOSVII

Package / Case :

6-WDFN Exposed Pad

Power Dissipation-Max :

1.25W Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

NO LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

9A

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

DS Breakdown Voltage-Min :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

S-PDSO-N6

Drain Current-Max (Abs) (ID) :

9A