SSM6K361NU,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Terminal Position :

Dual

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

69m Ω @ 2A, 10V

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Series :

U-MOSVIII-H

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V

Terminal Form :

NO LEAD

Operating Temperature :

150°C

JESD-30 Code :

S-PDSO-N6

Power Dissipation-Max :

2.5W Ta

Drain Current-Max (Abs) (ID) :

3.5A

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Number of Elements :

1

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 4.5V

Drain-source On Resistance-Max :

0.069Ohm

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Package / Case :

6-WDFN Exposed Pad

Pulsed Drain Current-Max (IDM) :

14A

Avalanche Energy Rating (Eas) :

9.1 mJ

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

FET Type :

N-Channel

Surface Mount :

yes

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

100V