SSM6K341NU,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Drain to Source Voltage (Vdss) :

60V

Series :

U-MOSVIII-H

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

36m Ω @ 4A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

24A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

6A

Terminal Position :

Dual

Number of Elements :

1

JESD-30 Code :

S-PDSO-N6

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

2.5W Ta

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

NO LEAD

Number of Terminations :

6

DS Breakdown Voltage-Min :

60V

Package / Case :

6-WDFN Exposed Pad

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Drain-source On Resistance-Max :

0.036Ohm

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Avalanche Energy Rating (Eas) :

28.9 mJ

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

9.3nC @ 10V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C