SSM6K217FE,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

500mW Ta

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

130pF @ 10V

Vgs(th) (Max) @ Id :

1.2V @ 1mA

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Rds On Max :

195 mΩ

Gate Charge (Qg) (Max) @ Vgs :

1.1nC @ 4.2V

Drain to Source Voltage (Vdss) :

40V

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

8 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 8V

Gate to Source Voltage (Vgs) :

12V

Rds On (Max) @ Id, Vgs :

195mOhm @ 1A, 8V

Current - Continuous Drain (Id) @ 25°C :

1.8A Ta

Number of Pins :

6

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Package / Case :

SOT-563, SOT-666

Series :

U-MOSVII-H

Published :

2014

Input Capacitance :

130pF

Max Operating Temperature :

150°C

Supplier Device Package :

ES6

Continuous Drain Current (ID) :

1.8A

Vgs (Max) :

±12V

Turn On Delay Time :

13 ns

Operating Temperature :

150°C TJ