SSM6K202FE,LF

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Mfr.Part #
SSM6K202FE,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
SOT-563, SOT-666
Datasheet
Download
Description
MOSFET N-CH 30V 2.3A ES6
Stock
57,210
In Stock :
57,210

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
270pF @ 10V
Radiation Hardening :
No
ECCN Code :
EAR99
Turn-Off Delay Time :
31 ns
Operating Temperature :
150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
30V
Mount :
Surface Mount
Power Dissipation-Max :
500mW Ta
Package / Case :
SOT-563, SOT-666
Vgs (Max) :
±12V
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4V
Number of Channels :
1
Continuous Drain Current (ID) :
2.3A
Factory Lead Time :
12 Weeks
Gate to Source Voltage (Vgs) :
12V
Published :
2009
Turn On Delay Time :
20 ns
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
2.3A Ta
RoHS Status :
RoHS Compliant
Packaging :
Tape and Reel (TR)
Number of Pins :
6
Rds On (Max) @ Id, Vgs :
85m Ω @ 1.5A, 4V
Vgs(th) (Max) @ Id :
1V @ 1mA
Datasheets
SSM6K202FE,LF
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation SSM6K202FE,LF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:SOT-563, SOT-666, Number of Channels:1, Mounting Type:Surface Mount, Number of Pins:6, SSM6K202FE,LF pinout, SSM6K202FE,LF datasheet PDF, SSM6K202FE,LF amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation SSM6K202FE,LF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation SSM6K202FE,LF


N-Channel Tape & Reel (TR) 85m Ω @ 1.5A, 4V ±12V 270pF @ 10V SOT-563, SOT-666

SSM6K202FE,LF Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 270pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2.3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 31 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.By using drive voltage (1.8V 4V), this device helps reduce its overall power consumption.

SSM6K202FE,LF Features


a continuous drain current (ID) of 2.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 31 ns


SSM6K202FE,LF Applications


There are a lot of Toshiba Semiconductor and Storage
SSM6K202FE,LF applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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