SQJA96EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Package / Case :

PowerPAK® SO-8

FET Type :

N-Channel

Series :

Automotive, AEC-Q101, TrenchFET®

Power Dissipation :

48W

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

48W Tc

Terminal Position :

Single

Number of Terminations :

4

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Transistor Element Material :

SILICON

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Continuous Drain Current (ID) :

30A

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

21.5m Ω @ 10A, 10V

Mounting Type :

Surface Mount

Height :

1.267mm

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Channels :

1

Drain to Source Breakdown Voltage :

80V

Pulsed Drain Current-Max (IDM) :

80A

Vgs (Max) :

±20V

Turn On Delay Time :

13 ns

Avalanche Energy Rating (Eas) :

24 mJ

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Turn-Off Delay Time :

21 ns

Max Junction Temperature (Tj) :

175°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V