SQJA02EP-T1_GE3
- Mfr.Part #
- SQJA02EP-T1_GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 60A PPAK SO-8
- Stock
- 2,942
- In Stock :
- 2,942
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Max Junction Temperature (Tj) :
- 175°C
- Series :
- Automotive, AEC-Q101, TrenchFET®
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 25V
- Drain to Source Voltage (Vdss) :
- 60V
- Package / Case :
- PowerPAK® SO-8
- Operating Temperature :
- -55°C~175°C TJ
- Height :
- 1.267mm
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 60V
- Number of Channels :
- 1
- Drain to Source Resistance :
- 4mOhm
- Continuous Drain Current (ID) :
- 75A
- Power Dissipation-Max :
- 68W Tc
- Supplier Device Package :
- PowerPAK® SO-8
- Turn On Delay Time :
- 19 ns
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 4.8mOhm @ 10A, 10V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 68W
- Turn-Off Delay Time :
- 30 ns
- Factory Lead Time :
- 14 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Max Operating Temperature :
- 175°C
- FET Type :
- N-Channel
- Datasheets
- SQJA02EP-T1_GE3
N-Channel Tape & Reel (TR) 4.8mOhm @ 10A, 10V ±20V 4700pF @ 25V 80nC @ 10V 60V PowerPAK® SO-8
SQJA02EP-T1_GE3 Overview
A device's maximal input capacitance is 4700pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 75A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 4mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 19 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
SQJA02EP-T1_GE3 Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 4mOhm
a 60V drain to source voltage (Vdss)
SQJA02EP-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQJA02EP-T1_GE3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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