SQJA02EP-T1_GE3

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Mfr.Part #
SQJA02EP-T1_GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 60V 60A PPAK SO-8
Stock
2,942
In Stock :
2,942

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Max Junction Temperature (Tj) :
175°C
Series :
Automotive, AEC-Q101, TrenchFET®
Input Capacitance (Ciss) (Max) @ Vds :
4700pF @ 25V
Drain to Source Voltage (Vdss) :
60V
Package / Case :
PowerPAK® SO-8
Operating Temperature :
-55°C~175°C TJ
Height :
1.267mm
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
60V
Number of Channels :
1
Drain to Source Resistance :
4mOhm
Continuous Drain Current (ID) :
75A
Power Dissipation-Max :
68W Tc
Supplier Device Package :
PowerPAK® SO-8
Turn On Delay Time :
19 ns
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Min Operating Temperature :
-55°C
Rds On (Max) @ Id, Vgs :
4.8mOhm @ 10A, 10V
Packaging :
Tape and Reel (TR)
Power Dissipation :
68W
Turn-Off Delay Time :
30 ns
Factory Lead Time :
14 Weeks
Gate to Source Voltage (Vgs) :
20V
Max Operating Temperature :
175°C
FET Type :
N-Channel
Datasheets
SQJA02EP-T1_GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SQJA02EP-T1_GE3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:PowerPAK® SO-8, Operating Temperature:-55°C~175°C TJ, Number of Channels:1, Mounting Type:Surface Mount, SQJA02EP-T1_GE3 pinout, SQJA02EP-T1_GE3 datasheet PDF, SQJA02EP-T1_GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SQJA02EP-T1_GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SQJA02EP-T1_GE3


N-Channel Tape & Reel (TR) 4.8mOhm @ 10A, 10V ±20V 4700pF @ 25V 80nC @ 10V 60V PowerPAK® SO-8

SQJA02EP-T1_GE3 Overview


A device's maximal input capacitance is 4700pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 75A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 4mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 19 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

SQJA02EP-T1_GE3 Features


a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 4mOhm
a 60V drain to source voltage (Vdss)


SQJA02EP-T1_GE3 Applications


There are a lot of Vishay Siliconix
SQJA02EP-T1_GE3 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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