SQJA00EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

25.6A

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

60V

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Terminal Form :

Gull wing

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G4

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Turn On Delay Time :

13 ns

Height :

1.267mm

Number of Terminations :

4

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Factory Lead Time :

14 Weeks

Power Dissipation :

48W

Package / Case :

PowerPAK® SO-8

Mounting Type :

Surface Mount

Number of Channels :

1

Power Dissipation-Max :

48W Tc

Series :

Automotive, AEC-Q101, TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

13m Ω @ 10A, 10V

FET Type :

N-Channel

Continuous Drain Current (ID) :

30A

Max Junction Temperature (Tj) :

175°C

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Pulsed Drain Current-Max (IDM) :

84A

Avalanche Energy Rating (Eas) :

26.5 mJ

Turn-Off Delay Time :

23 ns