SQJA06EP-T1_GE3
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- Mfr.Part #
- SQJA06EP-T1_GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 57A PPAK SO-8
- Stock
- 21,624
- In Stock ：
- 21,624
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 60V
- Power Dissipation-Max :
- 55W Tc
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 57A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Drain to Source Breakdown Voltage :
- 60V
- Max Junction Temperature (Tj) :
- 175°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 25V
- Power Dissipation :
- 55W
- Continuous Drain Current (ID) :
- 57A
- Vgs (Max) :
- ±20V
- Package / Case :
- PowerPAK® SO-8
- Factory Lead Time :
- 14 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 8.7mOhm @ 10A, 10V
- Turn On Delay Time :
- 15 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Resistance :
- 7.2mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Supplier Device Package :
- PowerPAK® SO-8
- Packaging :
- Tape and Reel (TR)
- Max Operating Temperature :
- 175°C
- FET Type :
- N-Channel
- Series :
- Automotive, AEC-Q101, TrenchFET®
- Mounting Type :
- Surface Mount
- Height :
- 1.267mm
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 23 ns
- Min Operating Temperature :
- -55°C
- Number of Channels :
- 1
- Datasheets
- SQJA06EP-T1_GE3
N-Channel Tape & Reel (TR) 8.7mOhm @ 10A, 10V ±20V 2800pF @ 25V 45nC @ 10V 60V PowerPAK® SO-8
SQJA06EP-T1_GE3 Overview
A device's maximum input capacitance is 2800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 57A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 23 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 7.2mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
SQJA06EP-T1_GE3 Features
a continuous drain current (ID) of 57A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 7.2mOhm
a 60V drain to source voltage (Vdss)
SQJA06EP-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQJA06EP-T1_GE3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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