SQJA94EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

55W

Number of Channels :

1

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Height :

1.267mm

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 10A, 10V

Number of Terminations :

4

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Max Junction Temperature (Tj) :

175°C

Continuous Drain Current (ID) :

46A

FET Type :

N-Channel

Vgs (Max) :

±20V

Package / Case :

PowerPAK® SO-8

Terminal Position :

Single

Drain to Source Breakdown Voltage :

80V

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

46A Tc

Avalanche Energy Rating (Eas) :

36 mJ

Power Dissipation-Max :

55W Tc

Turn On Delay Time :

11 ns

Packaging :

Tape and Reel (TR)

Factory Lead Time :

14 Weeks

Turn-Off Delay Time :

23 ns

Terminal Form :

Gull wing

Series :

Automotive, AEC-Q101, TrenchFET®

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G4