SQJA92EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Terminal Form :

Gull wing

Factory Lead Time :

14 Weeks

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Turn-Off Delay Time :

24 ns

Power Dissipation-Max :

68W Tc

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 10A, 10V

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Number of Channels :

1

Turn On Delay Time :

15 ns

Package / Case :

PowerPAK® SO-8

Continuous Drain Current (ID) :

57A

JESD-30 Code :

R-PSSO-G4

Transistor Element Material :

SILICON

Height :

1.267mm

Drain-source On Resistance-Max :

0.0095Ohm

Drain to Source Breakdown Voltage :

80V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

68W

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

Automotive, AEC-Q101, TrenchFET®

Avalanche Energy Rating (Eas) :

54 mJ

Max Junction Temperature (Tj) :

175°C

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2650pF @ 25V

Number of Terminations :

4

Number of Elements :

1

Reach Compliance Code :

Unknown