SQJA90EP-T1_GE3
- Mfr.Part #
- SQJA90EP-T1_GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 60A PPAK SO-8
- Stock
- 5,446
- In Stock :
- 5,446
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Reach Compliance Code :
- Unknown
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSSO-G4
- Terminal Form :
- Gull wing
- Height :
- 1.267mm
- Number of Terminations :
- 4
- Factory Lead Time :
- 14 Weeks
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- Automotive, AEC-Q101, TrenchFET®
- Power Dissipation-Max :
- 68W Tc
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 60A
- Mounting Type :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 3500pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Package / Case :
- PowerPAK® SO-8
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 26 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Max Junction Temperature (Tj) :
- 175°C
- Turn On Delay Time :
- 16 ns
- Drain to Source Breakdown Voltage :
- 80V
- Drain-source On Resistance-Max :
- 0.0076Ohm
- Power Dissipation :
- 68W
- Number of Channels :
- 1
- Rds On (Max) @ Id, Vgs :
- 7.6m Ω @ 10A, 10V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 57 mJ
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- SQJA90EP-T1_GE3
N-Channel Tape & Reel (TR) 7.6m Ω @ 10A, 10V ±20V 3500pF @ 25V 55nC @ 10V PowerPAK® SO-8
SQJA90EP-T1_GE3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 57 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 60A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 80V, and this device has a drainage-to-source breakdown voltage of 80VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 26 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
SQJA90EP-T1_GE3 Features
the avalanche energy rating (Eas) is 57 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 26 ns
SQJA90EP-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQJA90EP-T1_GE3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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