SQJA90EP-T1_GE3

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Mfr.Part #
SQJA90EP-T1_GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 80V 60A PPAK SO-8
Stock
5,446
In Stock :
5,446

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Reach Compliance Code :
Unknown
Vgs (Max) :
±20V
JESD-30 Code :
R-PSSO-G4
Terminal Form :
Gull wing
Height :
1.267mm
Number of Terminations :
4
Factory Lead Time :
14 Weeks
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
Automotive, AEC-Q101, TrenchFET®
Power Dissipation-Max :
68W Tc
Case Connection :
DRAIN
Continuous Drain Current (ID) :
60A
Mounting Type :
Surface Mount
Configuration :
SINGLE WITH BUILT-IN DIODE
Input Capacitance (Ciss) (Max) @ Vds :
3500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
55nC @ 10V
FET Type :
N-Channel
Transistor Element Material :
SILICON
Package / Case :
PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
26 ns
Gate to Source Voltage (Vgs) :
20V
Max Junction Temperature (Tj) :
175°C
Turn On Delay Time :
16 ns
Drain to Source Breakdown Voltage :
80V
Drain-source On Resistance-Max :
0.0076Ohm
Power Dissipation :
68W
Number of Channels :
1
Rds On (Max) @ Id, Vgs :
7.6m Ω @ 10A, 10V
Number of Elements :
1
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
57 mJ
Surface Mount :
yes
Operating Temperature :
-55°C~175°C TJ
Datasheets
SQJA90EP-T1_GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SQJA90EP-T1_GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Mounting Type:Surface Mount, Package / Case:PowerPAK® SO-8, Number of Channels:1, Operating Temperature:-55°C~175°C TJ, SQJA90EP-T1_GE3 pinout, SQJA90EP-T1_GE3 datasheet PDF, SQJA90EP-T1_GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SQJA90EP-T1_GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SQJA90EP-T1_GE3


N-Channel Tape & Reel (TR) 7.6m Ω @ 10A, 10V ±20V 3500pF @ 25V 55nC @ 10V PowerPAK® SO-8

SQJA90EP-T1_GE3 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 57 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 60A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 80V, and this device has a drainage-to-source breakdown voltage of 80VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 26 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

SQJA90EP-T1_GE3 Features


the avalanche energy rating (Eas) is 57 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 26 ns


SQJA90EP-T1_GE3 Applications


There are a lot of Vishay Siliconix
SQJA90EP-T1_GE3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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