SQJA84EP-T1_GE3
- Mfr.Part #
- SQJA84EP-T1_GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 46A PPAK SO-8
- Stock
- 1,423
- In Stock :
- 1,423
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101, TrenchFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Reach Compliance Code :
- Unknown
- Case Connection :
- DRAIN
- Factory Lead Time :
- 14 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2100pF @ 25V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Position :
- Single
- Drain to Source Breakdown Voltage :
- 80V
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 36 mJ
- Continuous Drain Current (ID) :
- 46A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 23 ns
- Surface Mount :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PSSO-G4
- Number of Terminations :
- 4
- Max Junction Temperature (Tj) :
- 175°C
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Terminal Form :
- Gull wing
- Number of Channels :
- 1
- Package / Case :
- PowerPAK® SO-8
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 55W Tc
- Power Dissipation :
- 55W
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Turn On Delay Time :
- 11 ns
- Rds On (Max) @ Id, Vgs :
- 12.5m Ω @ 10A, 10V
- Number of Elements :
- 1
- Height :
- 1.267mm
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- SQJA84EP-T1_GE3
N-Channel Tape & Reel (TR) 12.5m Ω @ 10A, 10V ±20V 2100pF @ 25V 35nC @ 10V PowerPAK® SO-8
SQJA84EP-T1_GE3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 36 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 46A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 80V, and this device has a drainage-to-source breakdown voltage of 80VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SQJA84EP-T1_GE3 Features
the avalanche energy rating (Eas) is 36 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 23 ns
SQJA84EP-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQJA84EP-T1_GE3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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