SQJA84EP-T1_GE3

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Mfr.Part #
SQJA84EP-T1_GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 80V 46A PPAK SO-8
Stock
1,423
In Stock :
1,423

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Series :
Automotive, AEC-Q101, TrenchFET®
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Reach Compliance Code :
Unknown
Case Connection :
DRAIN
Factory Lead Time :
14 Weeks
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
2100pF @ 25V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~175°C TJ
Terminal Position :
Single
Drain to Source Breakdown Voltage :
80V
Vgs (Max) :
±20V
Avalanche Energy Rating (Eas) :
36 mJ
Continuous Drain Current (ID) :
46A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
23 ns
Surface Mount :
yes
Configuration :
SINGLE WITH BUILT-IN DIODE
Packaging :
Tape and Reel (TR)
JESD-30 Code :
R-PSSO-G4
Number of Terminations :
4
Max Junction Temperature (Tj) :
175°C
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Terminal Form :
Gull wing
Number of Channels :
1
Package / Case :
PowerPAK® SO-8
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
55W Tc
Power Dissipation :
55W
Current - Continuous Drain (Id) @ 25°C :
46A Tc
Turn On Delay Time :
11 ns
Rds On (Max) @ Id, Vgs :
12.5m Ω @ 10A, 10V
Number of Elements :
1
Height :
1.267mm
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Operating Mode :
ENHANCEMENT MODE
Datasheets
SQJA84EP-T1_GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SQJA84EP-T1_GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Terminations:4, Number of Channels:1, Package / Case:PowerPAK® SO-8, SQJA84EP-T1_GE3 pinout, SQJA84EP-T1_GE3 datasheet PDF, SQJA84EP-T1_GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SQJA84EP-T1_GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SQJA84EP-T1_GE3


N-Channel Tape & Reel (TR) 12.5m Ω @ 10A, 10V ±20V 2100pF @ 25V 35nC @ 10V PowerPAK® SO-8

SQJA84EP-T1_GE3 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 36 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 46A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 80V, and this device has a drainage-to-source breakdown voltage of 80VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

SQJA84EP-T1_GE3 Features


the avalanche energy rating (Eas) is 36 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 23 ns


SQJA84EP-T1_GE3 Applications


There are a lot of Vishay Siliconix
SQJA84EP-T1_GE3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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