SQJA82EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Package / Case :

PowerPAK® SO-8

Series :

Automotive, AEC-Q101, TrenchFET®

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Terminal Position :

Single

Factory Lead Time :

14 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

60A

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

80V

Drain to Source Voltage (Vdss) :

80V

Drain-source On Resistance-Max :

0.0082Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Number of Terminations :

4

Terminal Form :

Gull wing

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Avalanche Energy Rating (Eas) :

62 mJ

JESD-30 Code :

R-PSSO-G4

Surface Mount :

yes

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

120A

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 10A, 10V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

68W Tc