SQJA80EP-T1_GE3

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Mfr.Part #
SQJA80EP-T1_GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 80V 60A PPAK SO-8
Stock
4,625
In Stock :
4,625

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Min Operating Temperature :
-55°C
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
3800pF @ 25V
Packaging :
Tape and Reel (TR)
Max Operating Temperature :
175°C
Operating Temperature :
-55°C~175°C TJ
Number of Channels :
1
Vgs (Max) :
±20V
Power Dissipation-Max :
68W Tc
Turn-Off Delay Time :
31 ns
Height :
1.267mm
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Max Junction Temperature (Tj) :
175°C
Factory Lead Time :
14 Weeks
Package / Case :
PowerPAK® SO-8
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
7mOhm @ 10A, 10V
Drain to Source Voltage (Vdss) :
80V
Turn On Delay Time :
16 ns
Gate Charge (Qg) (Max) @ Vgs :
75nC @ 10V
Power Dissipation :
68W
Series :
Automotive, AEC-Q101, TrenchFET®
Continuous Drain Current (ID) :
60A
Supplier Device Package :
PowerPAK® SO-8
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Drain to Source Resistance :
5.8mOhm
Drain to Source Breakdown Voltage :
80V
Datasheets
SQJA80EP-T1_GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SQJA80EP-T1_GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Channels:1, Package / Case:PowerPAK® SO-8, Mounting Type:Surface Mount, SQJA80EP-T1_GE3 pinout, SQJA80EP-T1_GE3 datasheet PDF, SQJA80EP-T1_GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SQJA80EP-T1_GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SQJA80EP-T1_GE3


N-Channel Tape & Reel (TR) 7mOhm @ 10A, 10V ±20V 3800pF @ 25V 75nC @ 10V 80V PowerPAK® SO-8

SQJA80EP-T1_GE3 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3800pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 60A.With a drain-source breakdown voltage of 80V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 80V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 31 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 5.8mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 80V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SQJA80EP-T1_GE3 Features


a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 31 ns
single MOSFETs transistor is 5.8mOhm
a 80V drain to source voltage (Vdss)


SQJA80EP-T1_GE3 Applications


There are a lot of Vishay Siliconix
SQJA80EP-T1_GE3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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