SQJA80EP-T1_GE3
- Mfr.Part #
- SQJA80EP-T1_GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 60A PPAK SO-8
- Stock
- 4,625
- In Stock :
- 4,625
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 3800pF @ 25V
- Packaging :
- Tape and Reel (TR)
- Max Operating Temperature :
- 175°C
- Operating Temperature :
- -55°C~175°C TJ
- Number of Channels :
- 1
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 68W Tc
- Turn-Off Delay Time :
- 31 ns
- Height :
- 1.267mm
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Max Junction Temperature (Tj) :
- 175°C
- Factory Lead Time :
- 14 Weeks
- Package / Case :
- PowerPAK® SO-8
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 7mOhm @ 10A, 10V
- Drain to Source Voltage (Vdss) :
- 80V
- Turn On Delay Time :
- 16 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 10V
- Power Dissipation :
- 68W
- Series :
- Automotive, AEC-Q101, TrenchFET®
- Continuous Drain Current (ID) :
- 60A
- Supplier Device Package :
- PowerPAK® SO-8
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Drain to Source Resistance :
- 5.8mOhm
- Drain to Source Breakdown Voltage :
- 80V
- Datasheets
- SQJA80EP-T1_GE3
N-Channel Tape & Reel (TR) 7mOhm @ 10A, 10V ±20V 3800pF @ 25V 75nC @ 10V 80V PowerPAK® SO-8
SQJA80EP-T1_GE3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3800pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 60A.With a drain-source breakdown voltage of 80V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 80V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 31 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 5.8mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 80V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
SQJA80EP-T1_GE3 Features
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 31 ns
single MOSFETs transistor is 5.8mOhm
a 80V drain to source voltage (Vdss)
SQJA80EP-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQJA80EP-T1_GE3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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