SQJA64EP-T1_GE3
- Mfr.Part #
- SQJA64EP-T1_GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 15A PPAK SO-8
- Stock
- 37,712
- In Stock :
- 37,712
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Junction Temperature (Tj) :
- 175°C
- Height :
- 1.267mm
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 670pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 9 ns
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Power Dissipation :
- 45W
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Package / Case :
- PowerPAK® SO-8
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 175°C
- Series :
- Automotive, AEC-Q101, TrenchFET®
- Drain to Source Breakdown Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Number of Channels :
- 1
- Drain to Source Voltage (Vdss) :
- 60V
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 45W Tc
- Factory Lead Time :
- 14 Weeks
- Turn-Off Delay Time :
- 15 ns
- Continuous Drain Current (ID) :
- 15A
- Rds On (Max) @ Id, Vgs :
- 32mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Supplier Device Package :
- PowerPAK® SO-8
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 25.9mOhm
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- SQJA64EP-T1_GE3
N-Channel Tape & Reel (TR) 32mOhm @ 4A, 10V ±20V 670pF @ 25V 12nC @ 10V 60V PowerPAK® SO-8
SQJA64EP-T1_GE3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 670pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 15A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 15 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 25.9mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
SQJA64EP-T1_GE3 Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 25.9mOhm
a 60V drain to source voltage (Vdss)
SQJA64EP-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQJA64EP-T1_GE3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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