SQJA60EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

24.6A

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Max Junction Temperature (Tj) :

175°C

Turn On Delay Time :

9 ns

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

26 mJ

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

60V

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G4

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

30A

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

PowerPAK® SO-8

Vgs (Max) :

±20V

Power Dissipation :

45W

Height :

1.267mm

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Surface Mount :

yes

Factory Lead Time :

14 Weeks

FET Type :

N-Channel

Turn-Off Delay Time :

21 ns

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 8A, 10V

Number of Terminations :

4

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

84A

Series :

Automotive, AEC-Q101, TrenchFET®

Power Dissipation-Max :

45W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Element Material :

SILICON