SQD50P06-15L_GE3
- Mfr.Part #
- SQD50P06-15L_GE3
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 50A TO252
- Stock
- 49,208
- In Stock :
- 49,208
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Published :
- 2016
- Min Operating Temperature :
- -55°C
- Number of Channels :
- 1
- Power Dissipation :
- 136W
- Max Operating Temperature :
- 175°C
- Drain to Source Resistance :
- 13.5mOhm
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- -50A
- Height :
- 2.507mm
- Threshold Voltage :
- -1.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Drain to Source Voltage (Vdss) :
- 60V
- Drain to Source Breakdown Voltage :
- -60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 136W Tc
- Supplier Device Package :
- TO-252, (D-Pak)
- FET Type :
- P-Channel
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn On Delay Time :
- 15 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 5910pF @ 25V
- Series :
- TrenchFET®
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 15.5mOhm @ 17A, 10V
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Turn-Off Delay Time :
- 112 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Max Junction Temperature (Tj) :
- 175°C
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- SQD50P06-15L_GE3
P-Channel Tape & Reel (TR) 15.5mOhm @ 17A, 10V ±20V 5910pF @ 25V 150nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
SQD50P06-15L_GE3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5910pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -50A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-60V. And this device has -60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 112 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 13.5mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -1.5V threshold voltage. Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
SQD50P06-15L_GE3 Features
a continuous drain current (ID) of -50A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 112 ns
single MOSFETs transistor is 13.5mOhm
a threshold voltage of -1.5V
a 60V drain to source voltage (Vdss)
SQD50P06-15L_GE3 Applications
There are a lot of Vishay Siliconix
SQD50P06-15L_GE3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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