SQD50P04-09L_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0094Ohm

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

50A

Power Dissipation :

136W

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

-1.5V

Fall Time (Typ) :

19 ns

Power Dissipation-Max :

136W Tc

Drain to Source Voltage (Vdss) :

40V

Element Configuration :

Single

REACH SVHC :

Unknown

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Published :

2016

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 17A, 10V

Number of Pins :

3

Turn On Delay Time :

13 ns

Radiation Hardening :

No

Rise Time :

15ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Weight :

1.437803g

Input Capacitance (Ciss) (Max) @ Vds :

6675pF @ 20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DS Breakdown Voltage-Min :

40V

Turn-Off Delay Time :

61 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pin Count :

4

Pbfree Code :

yes

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Number of Channels :

1

FET Type :

P-Channel

Mounting Type :

Surface Mount