SQD50N04-4M5L_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

11ns

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Pulsed Drain Current-Max (IDM) :

200A

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

5860pF @ 25V

Number of Terminations :

2

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

136W Tc

Drain to Source Voltage (Vdss) :

40V

Power Dissipation :

136W

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

9 ns

REACH SVHC :

Unknown

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Transistor Element Material :

SILICON

Pin Count :

4

DS Breakdown Voltage-Min :

40V

Continuous Drain Current (ID) :

50A

Turn-Off Delay Time :

39 ns

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 20A, 10V

FET Type :

N-Channel

Terminal Position :

Single

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.006Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

2017

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Threshold Voltage :

1.5V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Fall Time (Typ) :

11 ns