SQD50P03-07_GE3

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Mfr.Part #
SQD50P03-07_GE3
Manufacturer
Vishay
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET P-CH 30V 50A TO252AA
Stock
2,345
In Stock :
2,345

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Max Operating Temperature :
175°C
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Vgs (Max) :
±20V
Number of Pins :
3
Min Operating Temperature :
-55°C
Gate to Source Voltage (Vgs) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
12 Weeks
RoHS Status :
RoHS Compliant
FET Type :
P-Channel
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Radiation Hardening :
No
Power Dissipation-Max :
136W Tc
Continuous Drain Current (ID) :
50A
Rise Time :
12ns
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Gate Charge (Qg) (Max) @ Vgs :
146nC @ 10V
Operating Temperature :
-55°C~175°C TJ
Turn-Off Delay Time :
63 ns
Input Capacitance (Ciss) (Max) @ Vds :
5490pF @ 25V
Power Dissipation :
136W
Supplier Device Package :
TO-252AA
Drain to Source Voltage (Vdss) :
30V
Mounting Type :
Surface Mount
Published :
2017
Mount :
Surface Mount
Fall Time (Typ) :
28 ns
Turn On Delay Time :
11 ns
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
7mOhm @ 20A, 10V
Datasheets
SQD50P03-07_GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SQD50P03-07_GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, SQD50P03-07_GE3 pinout, SQD50P03-07_GE3 datasheet PDF, SQD50P03-07_GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SQD50P03-07_GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SQD50P03-07_GE3


P-Channel Tape & Reel (TR) 7mOhm @ 20A, 10V ±20V 5490pF @ 25V 146nC @ 10V 30V TO-252-3, DPak (2 Leads + Tab), SC-63

SQD50P03-07_GE3 Overview


A device's maximum input capacitance is 5490pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 50A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 63 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

SQD50P03-07_GE3 Features


a continuous drain current (ID) of 50A
the turn-off delay time is 63 ns
a 30V drain to source voltage (Vdss)


SQD50P03-07_GE3 Applications


There are a lot of Vishay Siliconix
SQD50P03-07_GE3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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