SPZT751T1G

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Mfr.Part #
SPZT751T1G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
PZT751 - HIGH CURRENT PNP BIPOLA
Stock
50,267
In Stock :
50,267

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
5V
Weight :
188.014037mg
Operating Temperature :
150°C TJ
Collector Emitter Breakdown Voltage :
60V
Transistor Type :
PNP
Transition Frequency :
75MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2007
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Max Collector Current :
2A
Polarity/Channel Type :
PNP
Pin Count :
4
Packaging :
Tape and Reel (TR)
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
500mV
Collector Emitter Voltage (VCEO) :
60V
Collector Base Voltage (VCBO) :
80V
Current - Collector Cutoff (Max) :
100nA ICBO
Gain Bandwidth Product :
75MHz
Package / Case :
TO-261-4, TO-261AA
Element Configuration :
Single
ECCN Code :
EAR99
Terminal Finish :
Tin (Sn)
Radiation Hardening :
No
Number of Pins :
4
Pbfree Code :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
75 @ 1A 2V
JESD-609 Code :
e3
Current - Collector (Ic) (Max) :
2A
RoHS Status :
ROHS3 Compliant
Surface Mount :
yes
Mounting Type :
Surface Mount
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 2A
Factory Lead Time :
4 Weeks
Max Power Dissipation :
800mW
Datasheets
SPZT751T1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SPZT751T1G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-261-4, TO-261AA, Number of Pins:4, Mounting Type:Surface Mount, SPZT751T1G pinout, SPZT751T1G datasheet PDF, SPZT751T1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SPZT751T1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SPZT751T1G


PNP 150°C TJ 100nA ICBO PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

SPZT751T1G Overview


This device has a DC current gain of 75 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 75MHz.A maximum collector current of 2A volts is possible.

SPZT751T1G Features


the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 75MHz


SPZT751T1G Applications


There are a lot of ON Semiconductor
SPZT751T1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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