SPZT751T1G
- Mfr.Part #
- SPZT751T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- PZT751 - HIGH CURRENT PNP BIPOLA
- Stock
- 50,267
- In Stock :
- 50,267
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 188.014037mg
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Type :
- PNP
- Transition Frequency :
- 75MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2007
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Max Collector Current :
- 2A
- Polarity/Channel Type :
- PNP
- Pin Count :
- 4
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Base Voltage (VCBO) :
- 80V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 75MHz
- Package / Case :
- TO-261-4, TO-261AA
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Number of Pins :
- 4
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1A 2V
- JESD-609 Code :
- e3
- Current - Collector (Ic) (Max) :
- 2A
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 800mW
- Datasheets
- SPZT751T1G

PNP 150°C TJ 100nA ICBO PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
SPZT751T1G Overview
This device has a DC current gain of 75 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 75MHz.A maximum collector current of 2A volts is possible.
SPZT751T1G Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 75MHz
SPZT751T1G Applications
There are a lot of ON Semiconductor
SPZT751T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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