SPZT2222AT1G
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- Mfr.Part #
- SPZT2222AT1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT223
- Stock
- 1,751
- In Stock ：
- 1,751
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1.5W
- Gain Bandwidth Product :
- 300MHz
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 40V
- Factory Lead Time :
- 8 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Continuous Collector Current :
- 600mA
- Weight :
- 188.014037mg
- Max Operating Temperature :
- 150°C
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Published :
- 2013
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 4
- Pin Count :
- 4
- Polarity/Channel Type :
- NPN
- Min Operating Temperature :
- -65°C
- Package / Case :
- TO-261-4, TO-261AA
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 40V
- Max Collector Current :
- 600mA
- Collector Base Voltage (VCBO) :
- 75V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 1V
- Base Part Number :
- PZT2222A
- ECCN Code :
- EAR99
- hFE Min :
- 100
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- SPZT2222AT1G
NPN 10nA ICBO NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
SPZT2222AT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 600mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 300MHz is present in the part.Collector current can be as low as 600mA volts at its maximum.
SPZT2222AT1G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
SPZT2222AT1G Applications
There are a lot of ON Semiconductor
SPZT2222AT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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