SPZT3904T1G

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Mfr.Part #
SPZT3904T1G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 40V 0.2A SOT223
Stock
800
In Stock :
800

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Base Part Number :
PZT3904
Collector Base Voltage (VCBO) :
60V
Current - Collector (Ic) (Max) :
200mA
Series :
Automotive, AEC-Q101
Transition Frequency :
300MHz
Max Power Dissipation :
1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 10mA 1V
Element Configuration :
Single
Package / Case :
TO-261-4, TO-261AA
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Emitter Base Voltage (VEBO) :
6V
Surface Mount :
yes
Pin Count :
4
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Collector Emitter Breakdown Voltage :
40V
Number of Pins :
4
Polarity/Channel Type :
NPN
Collector Emitter Voltage (VCEO) :
40V
Factory Lead Time :
2 Weeks
Published :
2011
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin (Sn)
Mounting Type :
Surface Mount
Gain Bandwidth Product :
300MHz
Max Collector Current :
200mA
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
300mV @ 5mA, 50mA
Packaging :
Tape and Reel (TR)
Lead Free :
Lead Free
Lifecycle Status :
ACTIVE (Last Updated: 12 hours ago)
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
300mV
Datasheets
SPZT3904T1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SPZT3904T1G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:PZT3904, Package / Case:TO-261-4, TO-261AA, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Mounting Type:Surface Mount, SPZT3904T1G pinout, SPZT3904T1G datasheet PDF, SPZT3904T1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SPZT3904T1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SPZT3904T1G


NPN -55°C~150°C TJ NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

SPZT3904T1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 300MHz.During maximum operation, collector current can be as low as 200mA volts.

SPZT3904T1G Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz


SPZT3904T1G Applications


There are a lot of ON Semiconductor
SPZT3904T1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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