SPI15N65C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Power Dissipation-Max :

156W Tc

Published :

2007

Current - Continuous Drain (Id) @ 25°C :

15A Tc

DS Breakdown Voltage-Min :

650V

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

15A

Rds On (Max) @ Id, Vgs :

280m Ω @ 9.4A, 10V

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Transistor Application :

SWITCHING

Reach Compliance Code :

Compliant

Vgs(th) (Max) @ Id :

3.9V @ 675µA

Pbfree Code :

yes

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

45A

Pin Count :

3

Surface Mount :

No

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

650V

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

460 mJ

Vgs (Max) :

±20V

Terminal Position :

Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Series :

CoolMOS™

Number of Terminations :

3

Drain-source On Resistance-Max :

0.28Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1