SPI11N60C3HKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

380m Ω @ 7A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Vgs(th) (Max) @ Id :

3.9V @ 500µA

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Surface Mount :

No

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

340 mJ

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Drain-source On Resistance-Max :

0.38Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Published :

2005

Transistor Element Material :

SILICON

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Pin Count :

3

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

11A

Number of Terminations :

3

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Pulsed Drain Current-Max (IDM) :

33A

Reach Compliance Code :

Compliant

Vgs (Max) :

±20V

Power Dissipation-Max :

125W Tc

Series :

CoolMOS™

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

600V