SPI11N65C3XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

CoolMOS™

Rise Time :

5ns

Drain to Source Voltage (Vdss) :

650V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Mount :

Through Hole

Turn-Off Delay Time :

44 ns

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Power Dissipation-Max :

125W Tc

Rds On Max :

380 mΩ

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Factory Lead Time :

8 Weeks

Height :

9.45mm

Packaging :

Tube

Width :

4.52mm

Published :

2005

FET Type :

N-Channel

Drain to Source Resistance :

380mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.36mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

650V

Mounting Type :

Through Hole

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

380mOhm @ 7A, 10V

Element Configuration :

Single

Turn On Delay Time :

10 ns

Vgs (Max) :

±20V

RoHS Status :

RoHS Compliant

Input Capacitance :

1.2nF

Continuous Drain Current (ID) :

11A

Vgs(th) (Max) @ Id :

3.9V @ 500µA

Supplier Device Package :

PG-TO262-3-1

Gate to Source Voltage (Vgs) :

20V

Min Operating Temperature :

-55°C