SPI10N10
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- Mfr.Part #
- SPI10N10
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 10.3A TO262-3
- Stock
- 4,975
- In Stock ：
- 4,975
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Vgs(th) (Max) @ Id :
- 4V @ 21μA
- Voltage - Rated DC :
- 100V
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 41.2A
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Current Rating :
- 10.3A
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 7.8A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 60 mJ
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 19.4nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 10.3A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- Matte Tin (Sn)
- Qualification Status :
- Not Qualified
- Published :
- 2001
- Input Capacitance (Ciss) (Max) @ Vds :
- 426pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 10.3A Tc
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-220AB
- Pin Count :
- 3
- Power Dissipation-Max :
- 50W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- SIPMOS®
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.17Ohm
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- SPI10N10
N-Channel Tube 170m Ω @ 7.8A, 10V ±20V 426pF @ 25V 19.4nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
SPI10N10 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 60 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 426pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10.3A continuous drain current (ID).Peak drain current is 41.2A, which is the maximum pulsed drain current.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
SPI10N10 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 10.3A
based on its rated peak drain current 41.2A.
SPI10N10 Applications
There are a lot of Infineon Technologies
SPI10N10 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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