SPI15N60CFD

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

150 °C

Input Capacitance :

1.82 nF

Operating Temperature :

-55°C ~ 150°C (TJ)

Dual Supply Voltage :

650 V

FET Type :

N-Channel

Element Configuration :

Single

FET Feature :

-

Series :

CoolMOS™

Drain to Source Resistance :

330 mΩ

Mounting Type :

Through Hole

Supplier Device Package :

PG-TO262-3-1

Rise Time :

24 ns

Gate to Source Voltage (Vgs) :

20 V

Continuous Drain Current (ID) :

13.4 A

Drain to Source Breakdown Voltage :

600 V

Product Status :

Active

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Rds On (Max) @ Id, Vgs :

330mOhm @ 9.4A, 10V

Current - Continuous Drain (Id) @ 25°C :

13.4A (Tc)

Rds On Max :

330 mΩ

Power Dissipation :

156 W

Turn-On Delay Time :

43 ns

Input Capacitance (Ciss) (Max) @ Vds :

1820 pF @ 25 V

Nominal Vgs :

4 V

Min Operating Temperature :

-55 °C

Vgs(th) (Max) @ Id :

5V @ 750µA

Max Power Dissipation :

156 W

Drive Voltage (Max Rds On, Min Rds On) :

10V

Power Dissipation (Max) :

156W (Tc)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Number of Elements :

1

Number of Pins :

3

Termination :

Through Hole

Channel Type :

N

Radiation Hardening :

No

RoHS :

Compliant

Threshold Voltage :

4 V

Gate Charge (Qg) (Max) @ Vgs :

84 nC @ 10 V

Continuous Drain Current Id :

13.4

Turn-Off Delay Time :

47 ns

Package :

Bulk

Drain to Source Voltage (Vdss) :

650 V