SPB18P06PGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

ECCN Code :

EAR99

Turn-Off Delay Time :

25 ns

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

60V

Pbfree Code :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2006

Threshold Voltage :

-3V

Rise Time :

5.8ns

Gate to Source Voltage (Vgs) :

20V

Length :

10mm

Nominal Vgs :

-3 V

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Fall Time (Typ) :

11 ns

Continuous Drain Current (ID) :

-18.7A

Factory Lead Time :

13 Weeks

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

74.8A

Number of Channels :

1

Height :

4.5mm

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

18.7A Ta

Vgs(th) (Max) @ Id :

4V @ 1mA

Width :

4.4mm

JESD-609 Code :

e3

Current Rating :

-18.6A

Rds On (Max) @ Id, Vgs :

130m Ω @ 13.2A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

81.1W Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Max Junction Temperature (Tj) :

175°C

Drain to Source Breakdown Voltage :

-60V

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

-60V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED

Series :

SIPMOS®

Power Dissipation :

81.1W

Turn On Delay Time :

12 ns

Lead Free :

Lead Free

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single