SPB100N04S2L-03

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Mfr.Part #
SPB100N04S2L-03
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 40V 100A TO263-3
Stock
36,226
In Stock :
36,226

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
3m Ω @ 80A, 10V
JESD-609 Code :
e3
Number of Terminations :
2
Transistor Application :
SWITCHING
Reach Compliance Code :
Unknown
Terminal Finish :
MATTE TIN
Continuous Drain Current (ID) :
100A
Operating Temperature :
-55°C~175°C TJ
Current Rating :
100A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Avalanche Energy Rating (Eas) :
810 mJ
FET Type :
N-Channel
Lead Free :
Contains Lead
Configuration :
SINGLE WITH BUILT-IN DIODE
Qualification Status :
Not Qualified
Drain-source On Resistance-Max :
0.0041Ohm
Power Dissipation-Max :
300W Tc
Mount :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSSO-G2
Terminal Position :
Single
Additional Feature :
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Published :
2003
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tape and Reel (TR)
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
230nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Pulsed Drain Current-Max (IDM) :
400A
Voltage - Rated DC :
40V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id :
2V @ 250μA
RoHS Status :
Non-RoHS Compliant
Number of Elements :
1
Series :
OptiMOS™
Datasheets
SPB100N04S2L-03
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPB100N04S2L-03 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, SPB100N04S2L-03 pinout, SPB100N04S2L-03 datasheet PDF, SPB100N04S2L-03 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPB100N04S2L-03 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SPB100N04S2L-03


N-Channel Tape & Reel (TR) 3m Ω @ 80A, 10V ±20V 8000pF @ 25V 230nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPB100N04S2L-03 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 810 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 8000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 400A, its maximum pulsed drain current.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

SPB100N04S2L-03 Features


the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 400A.


SPB100N04S2L-03 Applications


There are a lot of Infineon Technologies
SPB100N04S2L-03 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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