SPB100N04S2L-03
- Mfr.Part #
- SPB100N04S2L-03
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 100A TO263-3
- Stock
- 36,226
- In Stock :
- 36,226
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 3m Ω @ 80A, 10V
- JESD-609 Code :
- e3
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Unknown
- Terminal Finish :
- MATTE TIN
- Continuous Drain Current (ID) :
- 100A
- Operating Temperature :
- -55°C~175°C TJ
- Current Rating :
- 100A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 810 mJ
- FET Type :
- N-Channel
- Lead Free :
- Contains Lead
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.0041Ohm
- Power Dissipation-Max :
- 300W Tc
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Published :
- 2003
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 8000pF @ 25V
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 400A
- Voltage - Rated DC :
- 40V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- RoHS Status :
- Non-RoHS Compliant
- Number of Elements :
- 1
- Series :
- OptiMOS™
- Datasheets
- SPB100N04S2L-03

N-Channel Tape & Reel (TR) 3m Ω @ 80A, 10V ±20V 8000pF @ 25V 230nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPB100N04S2L-03 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 810 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 8000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 400A, its maximum pulsed drain current.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SPB100N04S2L-03 Features
the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 400A.
SPB100N04S2L-03 Applications
There are a lot of Infineon Technologies
SPB100N04S2L-03 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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