SPB100N08S2-07

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

400A

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

100A

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Mount :

Surface Mount

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0068Ohm

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 66A, 10V

Number of Elements :

1

Voltage - Rated DC :

75V

Published :

2003

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

4

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

6020pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Lead Free :

Contains Lead

JESD-609 Code :

e3

Power Dissipation-Max :

300W Tc

Number of Terminations :

2

Reach Compliance Code :

Unknown

Current Rating :

100A

Avalanche Energy Rating (Eas) :

810 mJ

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Terminal Finish :

MATTE TIN

Series :

OptiMOS™

Terminal Position :

Single

Terminal Form :

Gull wing

FET Type :

N-Channel