SPB100N03S2L-03

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Mfr.Part #
SPB100N03S2L-03
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 30V 100A TO263-3
Stock
28,682
In Stock :
28,682

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
Published :
2003
Pulsed Drain Current-Max (IDM) :
400A
Voltage - Rated DC :
30V
Mounting Type :
Surface Mount
Number of Terminations :
2
Current Rating :
100A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
100A
Terminal Form :
Gull wing
Series :
OptiMOS™
Gate Charge (Qg) (Max) @ Vgs :
220nC @ 10V
Terminal Position :
Single
RoHS Status :
Non-RoHS Compliant
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Avalanche Energy Rating (Eas) :
810 mJ
Qualification Status :
Not Qualified
Drain-source On Resistance-Max :
0.0034Ohm
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
8180pF @ 25V
Rds On (Max) @ Id, Vgs :
2.7m Ω @ 80A, 10V
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
2V @ 250μA
Vgs (Max) :
±20V
Operating Temperature :
-55°C~175°C TJ
Peak Reflow Temperature (Cel) :
260
Power Dissipation-Max :
300W Tc
Number of Elements :
1
JESD-30 Code :
R-PSSO-G2
Pin Count :
4
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-609 Code :
e0
Case Connection :
DRAIN
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Terminal Finish :
Tin/Lead (Sn/Pb)
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Datasheets
SPB100N03S2L-03
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPB100N03S2L-03 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, SPB100N03S2L-03 pinout, SPB100N03S2L-03 datasheet PDF, SPB100N03S2L-03 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPB100N03S2L-03 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SPB100N03S2L-03


N-Channel Tape & Reel (TR) 2.7m Ω @ 80A, 10V ±20V 8180pF @ 25V 220nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPB100N03S2L-03 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 810 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8180pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.By using drive voltage (10V), this device helps reduce its overall power consumption.

SPB100N03S2L-03 Features


the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 400A.


SPB100N03S2L-03 Applications


There are a lot of Infineon Technologies
SPB100N03S2L-03 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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