SPB100N03S2L-03
- Mfr.Part #
- SPB100N03S2L-03
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 100A TO263-3
- Stock
- 28,682
- In Stock :
- 28,682
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Published :
- 2003
- Pulsed Drain Current-Max (IDM) :
- 400A
- Voltage - Rated DC :
- 30V
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Current Rating :
- 100A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 100A
- Terminal Form :
- Gull wing
- Series :
- OptiMOS™
- Gate Charge (Qg) (Max) @ Vgs :
- 220nC @ 10V
- Terminal Position :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Avalanche Energy Rating (Eas) :
- 810 mJ
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.0034Ohm
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 8180pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 2.7m Ω @ 80A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation-Max :
- 300W Tc
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 4
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e0
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Datasheets
- SPB100N03S2L-03

N-Channel Tape & Reel (TR) 2.7m Ω @ 80A, 10V ±20V 8180pF @ 25V 220nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPB100N03S2L-03 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 810 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8180pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.By using drive voltage (10V), this device helps reduce its overall power consumption.
SPB100N03S2L-03 Features
the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 400A.
SPB100N03S2L-03 Applications
There are a lot of Infineon Technologies
SPB100N03S2L-03 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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