SPB100N08S2L-07

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Mfr.Part #
SPB100N08S2L-07
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 75V 100A TO263-3
Stock
41,997
In Stock :
41,997

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
Non-RoHS Compliant
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
Current Rating :
100A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSSO-G2
Pin Count :
4
Drain-source On Resistance-Max :
0.0084Ohm
Published :
2006
Series :
OptiMOS™
Terminal Position :
Single
Number of Elements :
1
Operating Temperature :
-55°C~175°C TJ
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Pulsed Drain Current-Max (IDM) :
400A
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Qualification Status :
Not Qualified
Additional Feature :
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Form :
Gull wing
Rds On (Max) @ Id, Vgs :
6.5m Ω @ 68A, 10V
Gate Charge (Qg) (Max) @ Vgs :
246nC @ 10V
Number of Terminations :
2
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Finish :
MATTE TIN
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Input Capacitance (Ciss) (Max) @ Vds :
7130pF @ 25V
Power Dissipation-Max :
300W Tc
FET Type :
N-Channel
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
2V @ 250μA
Reach Compliance Code :
Unknown
Case Connection :
DRAIN
Mounting Type :
Surface Mount
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
100A
Voltage - Rated DC :
75V
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
810 mJ
Lead Free :
Contains Lead
JESD-609 Code :
e3
Datasheets
SPB100N08S2L-07
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPB100N08S2L-07 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Mounting Type:Surface Mount, SPB100N08S2L-07 pinout, SPB100N08S2L-07 datasheet PDF, SPB100N08S2L-07 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPB100N08S2L-07 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SPB100N08S2L-07


N-Channel Tape & Reel (TR) 6.5m Ω @ 68A, 10V ±20V 7130pF @ 25V 246nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPB100N08S2L-07 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 810 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7130pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.As far as peak drain current is concerned, its maximum pulsed current is 400A.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SPB100N08S2L-07 Features


the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 400A.


SPB100N08S2L-07 Applications


There are a lot of Infineon Technologies
SPB100N08S2L-07 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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