SPB100N08S2L-07
- Mfr.Part #
- SPB100N08S2L-07
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 100A TO263-3
- Stock
- 41,997
- In Stock :
- 41,997
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 100A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 4
- Drain-source On Resistance-Max :
- 0.0084Ohm
- Published :
- 2006
- Series :
- OptiMOS™
- Terminal Position :
- Single
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pulsed Drain Current-Max (IDM) :
- 400A
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Qualification Status :
- Not Qualified
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 68A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 246nC @ 10V
- Number of Terminations :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- MATTE TIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7130pF @ 25V
- Power Dissipation-Max :
- 300W Tc
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Reach Compliance Code :
- Unknown
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 100A
- Voltage - Rated DC :
- 75V
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 810 mJ
- Lead Free :
- Contains Lead
- JESD-609 Code :
- e3
- Datasheets
- SPB100N08S2L-07

N-Channel Tape & Reel (TR) 6.5m Ω @ 68A, 10V ±20V 7130pF @ 25V 246nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPB100N08S2L-07 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 810 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7130pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.As far as peak drain current is concerned, its maximum pulsed current is 400A.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SPB100N08S2L-07 Features
the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 400A.
SPB100N08S2L-07 Applications
There are a lot of Infineon Technologies
SPB100N08S2L-07 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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