SPB18P06P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

130m Ω @ 13.2A, 10V

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

-60V

Case Connection :

DRAIN

Pin Count :

4

Peak Reflow Temperature (Cel) :

220

FET Type :

P-Channel

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

151 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Current Rating :

-18.6A

Additional Feature :

AVALANCHE RATED

Lead Free :

Contains Lead

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Continuous Drain Current (ID) :

18.7A

Terminal Finish :

Tin/Lead (Sn/Pb)

Drain-source On Resistance-Max :

0.13Ohm

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Vgs (Max) :

±20V

JESD-609 Code :

e0

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Series :

SIPMOS®

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

74.8A

Published :

2006

Drain to Source Voltage (Vdss) :

60V

Power Dissipation-Max :

81.1W Ta

HTS Code :

8541.29.00.95

Current - Continuous Drain (Id) @ 25°C :

18.7A Ta

Vgs(th) (Max) @ Id :

4V @ 1mA