SPB160N04S203CTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G6

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

300W Tc

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 80A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2003

Series :

OptiMOS™

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

160A

Terminal Position :

Single

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

810 mJ

Additional Feature :

AVALANCHE RATED

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

640A

Surface Mount :

yes

Drain-source On Resistance-Max :

0.0029Ohm

DS Breakdown Voltage-Min :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Number of Elements :

1

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

7320pF @ 25V

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

40V

Number of Terminations :

6

Configuration :

SINGLE WITH BUILT-IN DIODE