SPB160N04S2-03

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

160A (Tc)

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

2.9mOhm @ 80A, 10V

Product Status :

Active

Mounting Type :

Surface Mount

FET Feature :

-

Power Dissipation (Max) :

300W (Tc)

Package :

Bulk

Series :

OptiMOS®

Gate Charge (Qg) (Max) @ Vgs :

170 nC @ 10 V

Channel Type :

N

FET Type :

N-Channel

Operating Temperature :

-55°C ~ 175°C (TJ)

Supplier Device Package :

PG-TO263-7-3

Package / Case :

TO-263-7, D²Pak (6 Leads + Tab)

Power Dissipation :

300

Input Capacitance (Ciss) (Max) @ Vds :

7320 pF @ 25 V

Continuous Drain Current Id :

160

Vgs (Max) :

±20V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

40 V

Technology :

MOSFET (Metal Oxide)