SPB11N60C3ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

650V

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

3.9V @ 500µA

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Published :

2005

Qualification Status :

Not Qualified

Pbfree Code :

No

Terminal Position :

Single

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Pin Count :

4

Drain Current-Max (Abs) (ID) :

11A

Rds On (Max) @ Id, Vgs :

380m Ω @ 7A, 10V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

33A

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.38Ohm

Additional Feature :

AVALANCHE RATED

Series :

CoolMOS™

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

340 mJ

Power Dissipation-Max :

125W Tc

JESD-30 Code :

R-PSSO-G2