SPB10N10L
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- Mfr.Part #
- SPB10N10L
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 10.3A TO263-3
- Stock
- 14,348
- In Stock ：
- 14,348
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 444pF @ 25V
- Turn On Delay Time :
- 4.6 ns
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 42.2A
- Terminal Position :
- Single
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- Voltage - Rated DC :
- 100V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e0
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 27.8 ns
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 10.3A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 10.3A
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 17.8 ns
- Lead Free :
- Contains Lead
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- TIN LEAD
- RoHS Status :
- Non-RoHS Compliant
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.21Ohm
- Published :
- 2002
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pin Count :
- 4
- Rise Time :
- 19.1ns
- Series :
- SIPMOS®
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 50W Tc
- Current Rating :
- 10.3A
- Rds On (Max) @ Id, Vgs :
- 154m Ω @ 8.1A, 10V
- Vgs(th) (Max) @ Id :
- 2V @ 21μA
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Datasheets
- SPB10N10L
N-Channel Tape & Reel (TR) 154m Ω @ 8.1A, 10V ±20V 444pF @ 25V 22nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPB10N10L Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 60 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 444pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 27.8 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 42.2A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 4.6 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
SPB10N10L Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 10.3A
the turn-off delay time is 27.8 ns
based on its rated peak drain current 42.2A.
SPB10N10L Applications
There are a lot of Infineon Technologies
SPB10N10L applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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