SPB10N10
- Mfr.Part #
- SPB10N10
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 10.3A TO263-3
- Stock
- 65,964
- In Stock :
- 65,964
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 29 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Series :
- SIPMOS®
- Number of Pins :
- 3
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Contains Lead
- Continuous Drain Current (ID) :
- 10.3A
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- Published :
- 2002
- Voltage - Rated DC :
- 100V
- JESD-30 Code :
- R-PSSO-G2
- Current Rating :
- 10.3A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain-source On Resistance-Max :
- 0.17Ohm
- Pulsed Drain Current-Max (IDM) :
- 41.2A
- Current - Continuous Drain (Id) @ 25°C :
- 10.3A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e0
- Terminal Position :
- Single
- Fall Time (Typ) :
- 23 ns
- Avalanche Energy Rating (Eas) :
- 60 mJ
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 19.4nC @ 10V
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rise Time :
- 46ns
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 7.8A, 10V
- Power Dissipation-Max :
- 50W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 426pF @ 25V
- Turn On Delay Time :
- 8.2 ns
- Vgs(th) (Max) @ Id :
- 4V @ 21μA
- Additional Feature :
- AVALANCHE RATED
- Peak Reflow Temperature (Cel) :
- 220
- Datasheets
- SPB10N10

N-Channel Tape & Reel (TR) 170m Ω @ 7.8A, 10V ±20V 426pF @ 25V 19.4nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPB10N10 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 60 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 426pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10.3A amps.It is [29 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 41.2A.A turn-on delay time of 8.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
SPB10N10 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 10.3A
the turn-off delay time is 29 ns
based on its rated peak drain current 41.2A.
SPB10N10 Applications
There are a lot of Infineon Technologies
SPB10N10 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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