SMUN5211T1
- Mfr.Part #
- SMUN5211T1
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 202MW SC70-3
- Stock
- 4,860
- In Stock :
- 4,860
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Resistor - Base (R1) :
- 10 k Ω
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Pin Count :
- 3
- Radiation Hardening :
- No
- Polarity :
- NPN
- Package / Case :
- SC-70, SOT-323
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 1
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Published :
- 2012
- Halogen Free :
- Halogen Free
- Reference Standard :
- AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Min Operating Temperature :
- -55°C
- Number of Pins :
- 3
- Transistor Type :
- NPN - Pre-Biased
- hFE Min :
- 35
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Pbfree Code :
- yes
- Max Power Dissipation :
- 202mW
- Power Dissipation :
- 202mW
- Collector Emitter Breakdown Voltage :
- 50V
- Max Collector Current :
- 100mA
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA
- Resistor - Emitter Base (R2) :
- 10 k Ω
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- Current - Collector Cutoff (Max) :
- 500nA
- Terminal Position :
- Dual
- Base Part Number :
- MUN52**DW1T
- Continuous Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 35 @ 5mA 10V
- Datasheets
- SMUN5211T1

SMUN5211T1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
SMUN5211T1G Description
The SMUN5211T1G is NPN Bipolar Digital Transistor (BRT) designed to replace a single device and its external resistor bias network.
SMUN5211T1G Features
-
Simplifies Circuit Design
-
Reduces Board Space
-
Reduces Component Count
-
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
SMUN5211T1G Applications
-
Inverter
-
Interface circuit
-
Driver circuit
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