SMUN5111T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

3

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Reference Standard :

AEC-Q101

Pbfree Code :

yes

Resistor - Base (R1) :

10 k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Halogen Free :

Halogen Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

10 k Ω

Max Operating Temperature :

150°C

Surface Mount :

yes

Max Collector Current :

100mA

Radiation Hardening :

No

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Continuous Collector Current :

100mA

hFE Min :

35

Base Part Number :

MUN51**T

Polarity :

PNP

Mounting Type :

Surface Mount

Package / Case :

SC-70, SOT-323

Number of Terminations :

3

JESD-609 Code :

e3

Published :

2012

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Max Power Dissipation :

202mW

Factory Lead Time :

4 Weeks

Power Dissipation :

202mW

Transistor Type :

PNP - Pre-Biased

Min Operating Temperature :

-55°C