SMMUN2111LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Transistor Type :

PNP - Pre-Biased

Halogen Free :

Halogen Free

Min Operating Temperature :

-55°C

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

50V

Length :

3.04mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Polarity :

PNP

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Max Power Dissipation :

246mW

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Number of Elements :

1

Transistor Application :

SWITCHING

Published :

2012

Resistor - Base (R1) :

10 k Ω

Base Part Number :

MMUN21**L

Height :

1.01mm

Pin Count :

3

Lead Free :

Lead Free

Resistor - Emitter Base (R2) :

10 k Ω

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Surface Mount :

yes

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Max Operating Temperature :

150°C

Width :

1.4mm

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

500nA

Reference Standard :

AEC-Q101

Collector Emitter Saturation Voltage :

250mV

Number of Pins :

3

Radiation Hardening :

No

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

ECCN Code :

EAR99

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

hFE Min :

35

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)