SMMB911DK-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

8V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

20V

Pbfree Code :

yes

Pin Count :

6

Power Dissipation :

3.1W

Rise Time :

45ns

Threshold Voltage :

-1V

Time@Peak Reflow Temperature-Max (s) :

40

Drain Current-Max (Abs) (ID) :

1.5A

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.295Ohm

Number of Terminations :

6

Transistor Application :

SWITCHING

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Terminal Form :

C BEND

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

FET Feature :

Standard

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Package / Case :

PowerPAK® SC-75-6L Dual

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

115pF @ 10V

DS Breakdown Voltage-Min :

20V

Turn On Delay Time :

12 ns

Continuous Drain Current (ID) :

2.6A

Case Connection :

DRAIN

Turn-Off Delay Time :

10 ns

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 P-Channel (Dual)

Vgs(th) (Max) @ Id :

1V @ 250μA

Max Power Dissipation :

3.1W

Fall Time (Typ) :

31 ns

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 8V

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

295m Ω @ 1.5A, 4.5V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE