SM6K2T110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

60V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

6 ns

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Fall Time (Typ) :

5 ns

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 200mA, 10V

Mounting Type :

Surface Mount

Max Power Dissipation :

300mW

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Logic Level Gate

Number of Pins :

6

Operating Temperature :

150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

15pF @ 10V

Peak Reflow Temperature (Cel) :

260

Resistance :

2.4Ohm

Gate Charge (Qg) (Max) @ Vgs :

4.4nC @ 10V

Base Part Number :

*K2

Voltage - Rated DC :

60V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Length :

2.9mm

Drain Current-Max (Abs) (ID) :

0.2A

Width :

1.6mm

Power Dissipation :

300mW

Lead Free :

Lead Free

Terminal Form :

Gull wing

Number of Terminations :

6

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Height :

1.1mm

Rise Time :

5ns

Package / Case :

SC-74, SOT-457

Terminal Finish :

TIN SILVER COPPER

Published :

2002

JESD-609 Code :

e1

Continuous Drain Current (ID) :

200mA

Pbfree Code :

yes

Radiation Hardening :

No

Pin Count :

6

Current Rating :

200mA

Turn-Off Delay Time :

12 ns