SIHH28N60E-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

29A

Rds On (Max) @ Id, Vgs :

98m Ω @ 14A, 10V

Drain to Source Breakdown Voltage :

600V

Input Capacitance (Ciss) (Max) @ Vds :

2614pF @ 100V

Turn-Off Delay Time :

84 ns

Number of Channels :

1

Vgs (Max) :

±30V

Factory Lead Time :

18 Weeks

Turn On Delay Time :

29 ns

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Height :

1.05mm

Max Junction Temperature (Tj) :

150°C

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

129nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

202W

Power Dissipation-Max :

202W Tc

Series :

E

Package / Case :

8-PowerTDFN

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)