SIHH14N65E-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

NO LEAD

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

4V

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

1712pF @ 100V

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Package / Case :

8-PowerTDFN

Drain to Source Voltage (Vdss) :

650V

JESD-30 Code :

S-PSSO-N4

Avalanche Energy Rating (Eas) :

226 mJ

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Continuous Drain Current (ID) :

15A

Number of Terminations :

4

Published :

2016

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

156W Tc

Mounting Type :

Surface Mount

Factory Lead Time :

18 Weeks

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±30V

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

650V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.26Ohm

Rds On (Max) @ Id, Vgs :

260m Ω @ 7A, 10V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING