SIHH14N60E-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Factory Lead Time :

18 Weeks

Drain to Source Voltage (Vdss) :

600V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.255Ohm

Terminal Form :

NO LEAD

Mount :

Surface Mount

Published :

2017

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

DS Breakdown Voltage-Min :

600V

Continuous Drain Current (ID) :

16A

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

S-PSSO-N4

Avalanche Energy Rating (Eas) :

173 mJ

Rds On (Max) @ Id, Vgs :

255m Ω @ 7A, 10V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

147W Tc

Case Connection :

DRAIN

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

8

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1416pF @ 100V

Package / Case :

8-PowerTDFN